Development of Ga2O3 Based Structures for High Power Applications
Sponsored by National Science Foundation (NSF)
John F. Muth
Tania M Paskova
Project runs from 08/01/2015 to 07/31/2020
$420,000
The objective of this proposal is to demonstrate the feasibility of producing Ga2O3 based structures for power applications. We intend to explore several growth approaches, aiming to achieve epitaxial structures of high quality. The expected strong potential of this material for producing high power devices will be explored by developing structures with controllable doping.
