EAGER: A Novel Route for High Activation of Implanted P-Type Regions in Vertical Gallium Nitride Devices
Project runs from 10/01/2022 to 03/31/2024
This project proposes a novel route for highly doped p-type in GaN using the process of solid phase epitaxy (SPE) after implantation. This SPE process involves the conversion of a metastable amorphous region containing the targeted p-type dopant (e.g. Mg) into a crystalline region through modest temperature anneals. In prior work on other semiconductors, SPE has shown to result in increased active dopant concentration that is in great excess of the solid solubility limit, decreased damaged, reduced channeling and lower temperature operation. All these characteristics are highly desirable for GaN vertical devices and warrant investigation of SPE in GaN. The proposed research aims to solve the fundamental problem in GaN devices towards power and RF device.