Engineering Strain in InGaN/GaN Multiple Quantum Wells for Improved Optical Devices
Salah M. Bedair
Nadia A. El-Masry
Project runs from 09/01/2014 to 08/31/2019
Current optical devices based on InGaN/GaN multiple quantum well (MQW) structures suffer from poor performance at long emission wavelengths due to low quantum efficiency and the droop phenomena. Some of the limitations are related to the very high strain and the accompanied piezoelectric fields present in the InGaN wells. We propose a strain balanced multiple quantum well (SBMQW) structure made of a thick InxGa1-xN template followed by InyGa1-yN/GaN MQW, where x < y.