SMART SiC Power ICs Scalable, Manufacturable, and Robust Technology for SiC Power Integrated Circuits
Project runs from 09/01/2019 to 08/31/2022
This collaborative project aims to develop scalable, manufacturable, and robust technology for SiC integrated circuits (SMART SiC ICs). To realize this goal, disruptive designs and processes will be developed to achieve integrated circuits of large scale (> 1 cm2) SiC Complementary Metal-Oxide-Semiconductor (CMOS) and high voltage (400 – 1200 V) lateral power MOSFETs (LDMOS) on 150 mm 4H-SiC substrates. The SMART SiC ICs will enable many applications requiring wide ranges of voltages and power ratings such as automotive, industrial, telecommunication, electronic data processing, energy harvesting, and power conditioning.