WBG Gate Driver for GaN on Power Overlay (POL) Synchronous Rectifier Power Module
Project runs from 09/16/2020 to 08/16/2021
The objective of the project is to convert a passively rectified 10kW DC-DC Converter to actively rectified topology through the use of GaN WBG devices. Critical to the success of the Power Module will be an Integrated Gate Driver with features as described in Table 1. The Center-Tapped Rectifier module shown in Figure 1 was redesigned to a Full Bridge configuration shown in Figure 2 in BP4 and delivered to the Power America Device Bank. Shown in Figure 3; new Power Overlays and substrates were designed for GaN devices to achieve Synchronous Full Bridge topology. Figure 4 is a representative electrical schematic of the GaN Full Bridge Rectifier. The rectified current shall be 400A objective (25C rating) and shall support a 28Vdc output level. The Gate Driver printed wiring board(PWB) may occupy the total area above the module baseplate excluding the power terminal areas. The Gate Driver may contain more than one pwb if necessary. The Gate Driver pwb shall use the four(4) module mounting holes of the module for its’ mounting. Central support for the pwb will be provided by the modules’ cover.