GaN depo process said to make brighter LEDs
January 25, 2011 | EE Times
A new gallium nitride (GaN) process purifies that high-energy material by eliminating up to 1,000 times as many defects as are typically present, according to its inventors at North Carolina State University (NCSU). The NCSU researchers predict that light-emitting diodes (LEDs), power transistors and other devices cast in GaN will be able to double their outputs by switching to the new process.