Power, speed and other highlights at IEDM

February 5, 2011 | Semiconductor Today

In the same section, North Carolina State University and Nitronex presented a normally-off nitride semiconductor transistor that included a silicon dioxide (SiO2) gate tunnel dielectric and tantalum nitride (TaN) floating gate layers [20.6]. The structure is described as being a metal-oxide-semiconductor-heterostructure field-effect transistor (MOS-HFET).