The power to change

October 15, 2019 | NewElectronics
In their work at North Carolina State University, Barkha Gupta and Rhett Davis showed that for a single silicon-on-insulator (SOI) process, which typically exhibit low leakage levels, the ratio of off-currents through an inverter versus a more complex NAND4 transistor stack varies dramatically with changes in process conditions at the fab.