Bongmook Lee

Biography

He received his M.S. and Ph.D. in Electrical and Computer Engineering from North Carolina State University. His doctoral work focused on developing advanced high-k/metal gate stacks for next generation CMOS technology. From 2010 to 2012, he was a postdoctoral research associate in the NSF-FREEDM system center. His research interests cover the broad area of materials and device design with current focus on ultra-low power environmental sensors, wide bandgap SiC and GaN power devices, wearable and flexible electronics, biosensors and nonvolatile memory devices. He was recipient of the Applied Materials doctoral Fellowship from 2008 to 2010. He has authored and co-authored more than 75 peer reviewed technical articles and holds 9 invention disclosures and 1 U.S. patent.

His current research interests lie in advanced electronic devices through concepts/materials innovation and a multidisciplinary approach to both enhance already existing device technologies and introduce completely new device application based nano systems. Therefore, the core of my research is based on design and simulation with experimental verification. To explore and push the performance limits of electronics and create novel applications for electronics, my work focuses on two main research areas: (i) Ultra-thin nano sensors for wearable applications, (ii) wearable sensing system and application, and (iii) Wide-bandgap semiconductor materials and devices for next generation power device application.

Education

• Ph.D. 2010
  Electrical and Computer Engineering
  North Carolina State University, Raleigh
• Master's 2005
  Electrical and Computer Engineering
  North Carolina State University, Raleigh

Awards & Honors

Recent Publications

• Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions (2020)
• Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx (2019)
• Electrical characteristics of 10-kV 4H-SiC MPS rectifiers with high Schottky barrier height (2018)
• Improvement of threshold voltage reliability of 4H-SiC MOSFETs with lanthanum silicate by high temperature forming gas anneal (2018)
• Investigation of O-3 adsorption on ultra-thin ALD SnO2 by QCM (2018)
• On using the volatile mem-capacitive effect of TiO2 resistive random access memory to mimic the synaptic forgetting process (2018)
• Optimization of ALD high-k gate dielectric to improve AlGaN/GaN MOS-HFET DC characteristics and reliability (2017)
• Electrical characteristics of SiO2 deposited by atomic layer deposition on 4H-SiC after nitrous oxide anneal (2016)
• Low-power wearable systems for continuous monitoring of environment and health for chronic respiratory disease (2016)
• Metal oxide gas sensing characterization by low frequency noise spectroscopy (2016)