Tania Paskova

Biography
Dr. Paskova is a distinguished scientist with over 25 years of combined experience in academia, industry, and government agencies in a multi-cultural environment.
Her expertise spans from semiconductor physics, material synthesis, advanced characterization of wide bandgap materials for electronic and photonic applications with particular focus on nitrides. Her current research interests include advanced crystal growth concepts, fundamental optical properties, surface modifications for sensing applications, and thermal transport in wide bandgap materials for high power applications.
She is editor and co-editor of two scientific books; author of 15 invited book chapters and reviews, and of more than 260 scientific papers in peer-review journals and conference proceedings. She has a strong record as a principal investigator on a number of projects granted by MDA, DARPA, AFRL, ARO, and NSF. She is serving as Editor for the Journal of Crystal Growth and a member of several referee boards.
Dr. Paskova has recently completed a 4-year tenure as a Program Director for Electronic and Photonic Materials (EPM) program with Division of Materials Research (DMR) at National Science Foundation (NSF) and is currently serving as a Program Manager for Electronic Sensing (ES) program in Army Research Office (ARO).
Education
-
Ph.D.
1992
Physics
Sofia University, Bulgaria -
Master's
1984
Physics
Sofia University, Bulgaria
Recent Publications
- Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1
- xN: Effect of layer thickness" [Appl. Phys. Lett.117 , 252102 (2020)] (2021) - Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy (2020)
- Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness (2020)
- Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography (2020)
- Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3 (2020)
- Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors (2019)
- Modification of the Surface Properties of AlxGa1-xN Substrates with Gradient Aluminum Composition Using Wet Chemical Treatments (2019)
- Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes (2019)
- Passivation of semipolar (10-1-1) GaN with different organic adsorbates (2019)
- Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique (2018)
Recent News

Faculty-2-Faculty Mentor Awards
Posted on August 23, 2016 | Filed Under: Faculty
Thirty-one College faculty members were recognized for their outstanding mentorship at the spring faculty meeting. To honor their accomplishments, each individual became recipients of the inaugural Faculty-2-Faculty Mentor Recognition. Of t …

New Technique Makes LEDs Brighter, More Resilient
Posted on April 30, 2014 | Filed Under: News
Researchers from North Carolina State University have developed a new processing technique that makes light emitting diodes (LEDs) brighter and more resilient by coating the semiconductor material gallium nitride (GaN) with a layer of phosp …

Dr. Tania Paskova and Dr. John Muth Receive Award For Research by the National Science Foundation
Posted on July 6, 2012 | Filed Under: News
[ubermenu config_id=”main” menu=”84″] NEWSROOM Dr. Tania Paskova and Dr. John Muth Receive Award For Research by the National Science FoundationJul 6, 2012 Dr. Tania Paskova and Dr. John Muth have been awarded $383,532 by the National Scien …