Argon Holds High-Power Potential For GaN Electronics
February 3, 2011 | CS Compund Semiconductor
By implanting a buffer made of argon, researchers have created GaN devices that can handle 10 times as much power as those without. Gallium nitride (GaN) based materials hold promise for emerging high-power devices that are more energy efficient than existing technologies. However, these GaN devices traditionally break down when exposed to high voltages.