BP6-3.28 Optimal HV SiC Device Characteristics for D-FACTS Rated 5 kV to 25 kV
This proposal aims to define the optimal static and dynamic characteristics of high voltage SiC MOSFETs for various D-FACTS applications, which are representative of equipment required within the next three years. SiC MOSFETs have advantages such as lower losses and smaller footprints compared to silicon IGBTs, and 1.7-kV SiC MOSFETs are already commercially available, with 3.3-kV, 6.5-kV, and 10-kV devices available in engineering samples. In order to facilitate the development of these devices and enable manufacturers to create roadmaps, this research seeks to understand the characteristics needed to meet the demands of electric utilities that are committed to de-carbonization. The results of this research will enable SiC MOSFET manufacturers to create better technology roadmaps in the future.
Sponsor
NCSU Power America - Next Generation Power Electronics Manufacturing Innovation Institute (NGPEMII)
The grant—running from March 15, 2022 to February 28, 2023—is for a total of $57,750.
Principle Investigators
Subhashish Bhattacharya
More Details
An important segment of electric utilities committed to de-carbonization of their generation fleets by setting aggressive goals with deadlines starting in 2030. Hence, distributed energy resources (DERs), often no-dispatchable and having fast power ramps, will become more prevalent in distribution systems. FERC orders 841 and 2222 should lead to greater use of power electronics to control power flow in distribution and transmission systems because of fast-response times required to maintain system stability and resiliency. Equipment based on power electronics are broadly called distribution flexible alternating current transmission systems (D-FACTS).
Concurrently, manufacturers of power semiconductor devices based on silicon carbide (SiC) have been developing high-voltage (HV) SiC MOSFETs within the 1.7-kV to 10-kV range. SiC MOSFETs rated 1.7 kV are already commercialized, 3.3-kV devices should be commercialized within the next 12 months from different manufacturers (e.g., Microchip, Wolfspeed) with 6.5-kV and 10-kV devices available in the form of engineering samples. It is well known that SiC MOSFETs have technical advantages of silicon IGBTs (e.g., lower losses, smaller footprints).
Consequently, the main goal of this proposal is to define the optimal static and dynamic characteristics of HV SiC MOSFETs for selected D-FACTS applications which are representative of equipment that would be required within the next 3 years and beyond. The results of this research should enable SiC MOSFET manufacturers to develop roadmaps considering the current and voltage ratings of selected representative applications.