Wide- and Ultra-Wide-Bandgap Power Electronics Research at Sandia National Laboratories

Wide-Bandgap (WBG) semiconductors such as such as Silicon Carbide and Gallium Nitride have revolutionized power electronics, and emerging Ultra-Wide-Bandgap (UWBG) materials such as Aluminum Nitride / Al-rich Aluminum Gallium Nitride, Diamond, and Gallium Oxide have the potential to realize the next paradigm shift in power conversion and related applications. Further, a holistic approach to the full power conversion system, including aspects such as optimized power module design and fabrication, magnetic materials and components, and circuit design and layout, is required to take full advantage of the properties of new devices. This talk will provide an overview of the research in WBG and UWBG power electronics at Sandia National Laboratories, covering the full spectrum from materials synthesis, through device / component design and characterization, to circuit and system implementation, and will also provide a broader perspective on the history and anticipated future of the field.

Robert Kaplar

Research Department Head of End-to-end Networked Systems, Sandia on April 3, 2026 at 10:15 AM in EB2 1231
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Bob Kaplar received a B.S. degree in Physics from Case Western Reserve University in 1994, followed by M.S. and Ph.D. degrees in Electrical Engineering from Ohio State University in 1998 and 2002, respectively. Upon graduation, he joined Sandia National Laboratories in Albuquerque, NM as a post-doctoral researcher, subsequently worked as a technical staff member for a dozen years, and since 2017 has served as the manager of Sandia’s Semiconductor Material and Device Sciences Department. Throughout his time at Sandia, his and his group’s work has focused primarily on the development and maturation of wide- and ultra-wide-bandgap semiconductor technologies, primarily for power conversion applications.

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