Ranbir Singh

Dr. Ranbir Singh has developed critical understanding and published on a wide range of SiC power devices including PiN, MPS rectifiers, Trench and planar MOSFETs, IGBTs, Thyristors and field controlled thyristors. He has co-authored over 200 publications in various refereed journals and conference proceedings and is an inventor on 35 issued US patents. He is the first author of the book titled “Cryogenic operation of silicon power devices”. He has served on the Technical committee of the IEEE ISPSD from 2002-04 & 2014-16, as well as IEEE IEDM from 2002-03. In 2003, and again in 2004 he received the IEE Japan Award for the development of record-setting performance from SiC devices. In 2011, and again in 2019 he won the R&D100 award towards his efforts in commercializing innovative SiC power devices. In 2012, EE Times named him as among "Forty Innovators building the foundations of next generation electronics industry.”

He received his Ph.D. and MS Degrees from North Carolina State University in 1992 and 1997 respectively; and A B.Tech degree from Indian Institute of Technology, Delhi in 1990. In 2004 he founded GeneSiC Semiconductor Inc., which successfully commercialized many families of SiC power devices with industry’s leading performance, ruggedness and reliability. The company was successfully acquired/merged with Navitas Semiconductor (NASDAQ:NVTS) in Aug 2022. During 2003-4, he worked on reliability of SiC power devices at NIST, Gaithersburg, MD; and from 1995-2003 he worked at Cree Inc. in Durham, NC.