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Bevel junction termination extension for silicon carbide high voltage

May 18, 2015 | Semiconductor Today

NC State researchers have developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices. Edge terminations are designed to avoid field crowding effects that cause premature breakdown. Woongje Sung et al, FREEDM Center, featured.

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Department of Electrical and Computer Engineering

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Raleigh, NC 27606

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