Bevel junction termination extension for silicon carbide high voltage
May 18, 2015 | Semiconductor Today![Semiconductor Today](/wp-content/news-logos/semiconductor_today.png)
NC State researchers have developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices. Edge terminations are designed to avoid field crowding effects that cause premature breakdown. Woongje Sung et al, FREEDM Center, featured.