Gallium nitride boosted into high-power realm

February 2, 2011 | EE Times

Gallium nitride is lauded as the next-generation material for high-power electronics, but until now has been plagued by breakdown above about 250 volts, according to researchers at North Carolina State University. The researchers claim to have discovered a technique to raise breakdown to 1,650 volts, thereby boosting power handling by 10 times.