Voids Slash Defect Density in GaN LEDs

January 26, 2011 | CS Compund Semiconductor

Defects in the gallium nitride LED film are drawn to voids and become trapped leaving the portions of the film above the voids with far fewer defects. Researchers from North Carolina State University have developed a new technique that reduces defects in the gallium nitride (GaN) films used to create LEDs grown on sapphire substrates.