Jonathan Wierer

Biography

Dr. Wierer's research interests include semiconductor device physics and semiconductor materials science. Specifically, he is interested in researching electronic and optoelectronic devices with wide bandgap semiconductors. He graduated with a Ph.D. in Electrical Engineering from the University of Illinois, Champaign-Urbana, in 1999 and was advised by Nick Holonyak, Jr. Before joining NC State University, Dr. Wierer worked at Philips-Lumileds, Sandia National Labs, and Lehigh University. At Lumileds Advanced Laboratories, his research focused on novel III-nitride light-emitting diodes (LEDs). This includes the development of the first high-power (1 Watt) flip-chip III-nitride LED and seminal work on III-nitride photonic crystal LEDs.  At Sandia National Laboratories, his interests broadened into other III-nitride research areas, including — solar cells, intersubband devices, layer intermixing, power electronic devices, ultra-violet LEDs, and nanowire LEDs. His most notable work there was proposing laser diodes as an ultra-efficient light source for solid-state lighting. Dr. Wierer has authored or co-authored over 200 journal publications and conference presentations and holds 42 patents, predominantly related to III-nitride devices.  He is a senior editor for the IEEE Photonics Technology Letters journal. He is a senior member of the Institute of Electrical and Electronics Engineers and Optica.

Education

• Ph.D. 1999
  Electrical Engineering
  University of Illinois at Urbana-Champaign
• Master's 1995
  Electrical Engineering
  University of Illinois at Urbana-Champaign
• Bachelor's 1994
  Electrical Engineering
  University of Illinois at Urbana-Champaign

Recent Publications

• Growth and characterization of AlInN/GaN superlattices (2024)
• Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots (2023)
• Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal-Oxide-Semiconductor Devices (2023)
• Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates (2023)
• Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes (2023)
• Structural and optical characterization of thin AlInN films on c-plane GaN substrates (2023)
• Thermal oxidation of lattice mismatched Al1-xInxN films on GaN (2023)
• Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission (2022)
• Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates (2022)
• Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm (2021)

Involvement

• IEEE Photonics Technology Letters
  Senior Editor
• IEEE Journal of Quantum Electronics
  Associate Editor

Awards & Honors