Salah Bedair

Biography

Dr. Bedair currently investigates semi-conductor materials and devices including novel growth techniques such as atomic layer epitaxy, laser-assisted diposition, molecular beam epitexy and chemical vapor diposition. He also studies optical, electrical and structural properties of semiconductors, epitaxial insulators and quantum well structures. Optical and microwave devices such as detectors, wave guides, solar cells, light emitting diodes, semiconductor light bulbs and modulation doped field effect transistors are currently considered in Dr. Bedair's lab.

Education

• Ph.D. 1969
  Engineering Science
  University of California, Berkley
• Master's 1965
  Nuclear Engineering
  University of California, Berkley
• Bachelor's 1960
  Electrical Engineering
  Alexandria University, Egypt

Recent Publications

• GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition (2024)
• Improved LED output power and external quantum efficiency using InGaN templates (2022)
• Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD (2022)
• P-type InxGa1-xN semibulk templates (0.02 < x < 0.16) with room temperature hole concentration of mid-10(19) cm(-3) and device quality surface morphology (2021)
• Shifting LED emission from blue to the green gap spectral range using In0.12Ga0.88N relaxed templates (2021)
• The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results (2021)
• Device quality templates of InxGa1-xN (x < 0.1) with defect densities comparable to GaN (2020)
• Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates (2020)
• Multi-junction solar cells by Intermetallic Bonding and interconnect of Dissimilar Materials: GaAs/Si (2020)
• Observing relaxation in device quality InGaN templates by TEM techniques (2020)

Awards & Honors