Exploring Surface and Bulk Defect States for High-Power Vertical GaN Diodes with Mg Implantation

The main aim of this research proposal is to investigate the influence of surface and bulk defects on the performance of low-loss vertical GaN power diodes created using Mg implantation and activation. By studying these effects, we hope to develop solutions that will enable the development of high power devices.

Sponsor

Principle Investigators

Spyridon Pavlidis

More Details

The objective of this research proposal is to systematically study the role that surface and bulk defects play in impacting the performance of low-loss vertical GaN power diodes fabricated with Mg implantation and activation. Solutions will be developed to unlock high power devices.

Spyridon Pavlidis

Associate Professor
 Monteith Research Center (MRC) 436
  spavlidis@ncsu.edu
  Website