Exploring Surface and Bulk Defect States for High-Power Vertical GaN Diodes with Mg Implantation
The main aim of this research proposal is to investigate the influence of surface and bulk defects on the performance of low-loss vertical GaN power diodes created using Mg implantation and activation. By studying these effects, we hope to develop solutions that will enable the development of high power devices.
US Navy-Office Of Naval Research
The grant—running from July 1, 2023 to June 30, 2028—is for a total of $900,000.
The objective of this research proposal is to systematically study the role that surface and bulk defects play in impacting the performance of low-loss vertical GaN power diodes fabricated with Mg implantation and activation. Solutions will be developed to unlock high power devices.