John Muth
Professor
The goal: Grow novel semiconductor materials, characterize their optical and eletrical properties, and fabricate novel optoelectronic devices. Sucessful intergration of these tasks will create enabling photonic technologies. This lab works with wide band gap semiconductors includling Gallium Nitride and Zinc Oxide and a variety materials to make quantum dots and other nanostructures.
Education
1988,Applied Engineering Physics, Cornell, Ithaca NY
1988-1993 Naval Nuclear Power Program, USS Baltimore (SSN 704)
1998 Solid State Physics, NCSU, Raleigh NC
Awards & Honors
- 2009 - United States Armed Forces Bronze Star Medal
- 2006 - Joint Services Humanitarian Service Medal (Hurricane Katrina)
- 2004 - National Academy of Engineers Frontiers of Science Award
- 2003 - Office of Naval Research Young Investigator Award
- 2002 - Oak Ridge Ralph E Powe Award
- 2000 - Discovery Magazine Technology Award, Top 10 Finalist
- 1988-1993 - Navy Commendation Medal, Navy Achievement Medals (2)
Recent Publications
- Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy (2020)
- Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness (2020)
- Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography (2020)
- Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3 (2020)
- Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors (2019)
- Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique (2018)
- A Wearable Hydration Sensor with Conformal Nanowire Electrodes (2017)
- A wearable hydration sensor with conformal nanowire electrodes (2017)
- Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants (2017)
- Building a 'deeper' understanding of underwater optical communications (2017)