John Muth

Biography

The goal: Grow novel semiconductor materials, characterize their optical and eletrical properties, and fabricate novel optoelectronic devices. Sucessful intergration of these tasks will create enabling photonic technologies. This lab works with wide band gap semiconductors includling Gallium Nitride and Zinc Oxide and a variety materials to make quantum dots and other nanostructures.

Education

• Ph.D. 1998
  Solid State Physics
  North Carolina State University, Raleigh
• Bachelor's 1988
  Applied Engineering Physics
  Cornell University, Ithaca

Recent Publications

• Designing and Testing a Closed-Loop Magnetically Actuated Laser Scanning System for Tissue Ablation (2022)
• Erratum: "Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness" [Appl. Phys. Lett. 117, 252102 (2020)] (2021)
• Dielectric and conducting properties of unintentionally and Sn-doped beta-Ga2O3 studied by terahertz spectroscopy (2020)
• Phonon-boundary scattering and thermal transport in AlxGa1-xN: Effect of layer thickness (2020)
• Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ - ${V}$ and Raman Nanothermography (2020)
• Thermal conductivity of ultra-wide bandgap thin layers - High Al-content AlGaN and beta-Ga2O3 (2020)
• Effect of Growth Pressure on PLD-Deposited Gallium Oxide Thin Films for Deep-UV Photodetectors (2019)
• Thermal conductivity of bulk and thin film beta-Ga2O3 measured by the 3 omega technique (2018)
• A Wearable Hydration Sensor with Conformal Nanowire Electrodes (2017)
• Anisotropic thermal conductivity of beta-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants (2017)

Awards & Honors